ECH8695R-TL-W

new-10%

Manufacturer part number:ECH8695R-TL-W

Manufacturer:ON Semiconductor

Description:MOSFET 2N-CH 24V 11A SOT28

Case Package:SOT-23

Datasheet:ECH8695R-TL-W Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e6
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Max Power Dissipation	1.4W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Channels	2
Element Configuration	Dual
Turn On Delay Time	300 ns
FET Type	2 N-Channel (Dual) Common Drain
Rds On (Max) @ Id, Vgs	9.1m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id	1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Rise Time	320ns
Drain to Source Voltage (Vdss)	24V
Fall Time (Typ)	22.3 μs
Turn-Off Delay Time	19.7 μs
Continuous Drain Current (ID)	11A
Gate to Source Voltage (Vgs)	12.5V
Drain to Source Breakdown Voltage	24V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate, 2.5V Drive
Height	900μm
Length	2.9mm
Width	2.3mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free