FDB12N50TM Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 456 mJ.The maximum input capacitance of this device is 1315pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 11.5A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 45 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 46A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 25 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
FDB12N50TM Features
the avalanche energy rating (Eas) is 456 mJ
a continuous drain current (ID) of 11.5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 46A.
FDB12N50TM Applications
There are a lot of ON Semiconductor
FDB12N50TM applications of single MOSFETs transistors.
- Micro Solar Inverter
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- DC/DC converters
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- Power Tools
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- Motor Drives and Uninterruptible Power Supples
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- Synchronous Rectification
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- Battery Protection Circuit
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- Telecom 1 Sever Power Supplies
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- Industrial Power Supplies
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- PFC stages, hard switching PWM stages and resonant switching
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- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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