APT22F120B2

new-10%

Manufacturer part number:APT22F120B2

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 1200V 23A T-MAX

Case Package:SOT-23

Datasheet:APT22F120B2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	POWER MOS 8™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	PURE MATTE TIN
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC	1.2kV
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Current Rating	22A
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1040W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.04kW
Case Connection	DRAIN
Turn On Delay Time	45 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	700m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	8370pF @ 25V
Current - Continuous Drain (Id) @ 25°C	23A Tc
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Rise Time	27ns
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	42 ns
Turn-Off Delay Time	145 ns
Continuous Drain Current (ID)	23A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.7Ohm
Pulsed Drain Current-Max (IDM)	90A
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free