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IRFBF20PBF

IRFBF20PBF

IRFBF20PBF

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 8Ohm @ 1A, 10V ±20V 490pF @ 25V 38nC @ 10V 900V TO-220-3

SOT-23

IRFBF20PBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 6.5Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 54W Tc
Element Configuration Single
Power Dissipation 54W
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.7A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 21ns
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 56 ns
Continuous Drain Current (ID) 1.7A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 900V
Input Capacitance 490pF
Drain to Source Resistance 8Ohm
Rds On Max 8 Ω
Nominal Vgs 4 V
Height 9.01mm
Length 10.41mm
Width 4.7mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.835064 $1.835064
10 $1.731192 $17.31192
100 $1.633200 $163.32
500 $1.540755 $770.3775
1000 $1.453543 $1453.543
IRFBF20PBF Product Details

IRFBF20PBF Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 490pF @ 25V.This device has a continuous drain current (ID) of [1.7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=900V, the drain-source breakdown voltage is 900V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 56 ns.MOSFETs have 8Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to operate this transistor, a voltage of 900V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRFBF20PBF Features


a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 56 ns
single MOSFETs transistor is 8Ohm
a threshold voltage of 4V
a 900V drain to source voltage (Vdss)


IRFBF20PBF Applications


There are a lot of Vishay Siliconix
IRFBF20PBF applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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