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NTD3817NT4G

NTD3817NT4G

NTD3817NT4G

ON Semiconductor

MOSFET N-CH 16V 7.6A DPAK

SOT-23

NTD3817NT4G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.2W Ta 25.9W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.9m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 702pF @ 12V
Current - Continuous Drain (Id) @ 25°C 7.6A Ta 34.5A Tc
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 4.5V
Drain to Source Voltage (Vdss) 16V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Continuous Drain Current (ID) 34.5A
Drain Current-Max (Abs) (ID) 7.6A
Drain-source On Resistance-Max 0.029Ohm
Pulsed Drain Current-Max (IDM) 78A
DS Breakdown Voltage-Min 16V
Avalanche Energy Rating (Eas) 15 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.105622 $1.105622
10 $1.043040 $10.4304
100 $0.984000 $98.4
500 $0.928302 $464.151
1000 $0.875756 $875.756

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