IXKR40N60C

new-10%

Manufacturer part number:IXKR40N60C

Manufacturer:IXYS

Description:MOSFET N-CH 600V 38A ISOPLUS247

Case Package:SOT-23

Datasheet:IXKR40N60C Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2001
Series	CoolMOS™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	70MOhm
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Max Power Dissipation	280W
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	280W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	70m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	3.9V @ 3mA
Current - Continuous Drain (Id) @ 25°C	38A Tc
Gate Charge (Qg) (Max) @ Vgs	250nC @ 10V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	38A
Threshold Voltage	3.9V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	600V
Isolation Voltage	2.5kV
FET Feature	Super Junction
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free