FDD3510H

new-10%

Manufacturer part number:FDD3510H

Manufacturer:ON Semiconductor

Description:FDD3510H datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDD3510H Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-5, DPak (4 Leads + Tab), TO-252AD
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	80MOhm
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Max Power Dissipation	1.3W
Terminal Position	SINGLE
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G4
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.1W
FET Type	N and P-Channel, Common Drain
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 4.3A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	800pF @ 40V
Current - Continuous Drain (Id) @ 25°C	4.3A 2.8A
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Rise Time	3ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	5 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	2.8A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	4.3A
Drain to Source Breakdown Voltage	80V
Avalanche Energy Rating (Eas)	37 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free