FDMA86151L

new-10%

Manufacturer part number:FDMA86151L

Manufacturer:ON Semiconductor

Description:FDMA86151L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMA86151L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-WDFN Exposed Pad
Number of Pins	6
Weight	30mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.4W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	5.6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	88m Ω @ 3.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	450pF @ 50V
Current - Continuous Drain (Id) @ 25°C	3.3A Ta
Gate Charge (Qg) (Max) @ Vgs	7.3nC @ 10V
Rise Time	1.4ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	1.6 ns
Turn-Off Delay Time	11 ns
Continuous Drain Current (ID)	3.3A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.088Ohm
Drain to Source Breakdown Voltage	100V
Feedback Cap-Max (Crss)	5 pF
RoHS Status	ROHS3 Compliant