IRLML6401TRPBF MOSFET Description

Advanced processing techniques are used in these P-Channel MOSFETs from International Rectifier to obtain exceptionally low on-resistance per silicon area. This feature gives the designer a very effective and dependable device for use in battery and load management, in addition to the quick switching speed and ruggedized device design that HEXFETB power MOSFETs are widely known for.

The regular SOT-23 packaging has been combined with a thermally improved big pad leadframe to create a HEXFET Power MOSFET with the lowest footprint available in the market. The Micro3M package is perfect for uses where printed circuit board space is at a premium. The Micro3 may readily fit into very small application contexts like portable electronics and PCMCIA cards thanks to its tiny profile (1.1mm). The best attainable thermal resistance and power dissipation are used.

IRLML6401TRPBF MOSFET Features

Halogen-Free

P-Channel MOSFET

Ultra-Low On-Resistance

1.8V Gate Rated

Fast Switching

Low Profile (<1.1mm)

Available in Tape and Reel

SOT-23 Footprint

Lead-Free

IRLML6401TRPBF MOSFET Applications

Synchronous Rectification Applications

UIS Rating System

Active Clamp Switch

Linear Switching Applications

Totem Pole Swithcing Circuits

Ground-Connected Loads