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FQAF6N80

FQAF6N80

FQAF6N80

ON Semiconductor

MOSFET N-CH 800V 4.4A TO-3PF

SOT-23

FQAF6N80 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Supplier Device Package TO-3PF
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2000
Series QFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 90W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.95Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.4A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:5347 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.60000$1.6
500$1.584$792
1000$1.568$1568
1500$1.552$2328
2000$1.536$3072
2500$1.52$3800

About FQAF6N80

The FQAF6N80 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 800V 4.4A TO-3PF.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FQAF6N80, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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