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FQAF6N80

  • FQAF6N80
  • FQAF6N80

FQAF6N80

FQAF6N80

ON Semiconductor

MOSFET N-CH 800V 4.4A TO-3PF

SOT-23

FQAF6N80 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Supplier Device Package TO-3PF
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 90W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.95Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.4A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.60000 $1.6
500 $1.584 $792
1000 $1.568 $1568
1500 $1.552 $2328
2000 $1.536 $3072
2500 $1.52 $3800

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