NTHD4N02FT1

new-10%

Manufacturer part number:NTHD4N02FT1

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 20V 2.9A CHIPFET

Case Package:SOT-23

Datasheet:NTHD4N02FT1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	OBSOLETE (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	240
Reach Compliance Code	not_compliant
Current Rating	2.7A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	910mW Tj
Operating Mode	ENHANCEMENT MODE
Power Dissipation	910mW
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 2.9A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	300pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.9A Tj
Gate Charge (Qg) (Max) @ Vgs	4nC @ 4.5V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	2.9A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	3.1A
Drain to Source Breakdown Voltage	20V
FET Feature	Schottky Diode (Isolated)
Feedback Cap-Max (Crss)	50 pF
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead