FDMC6679AZ Description

FDMC6679AZ is a -30v P-Channel Power Trench? MOSFET. The onsemi FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.  The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDMC6679AZ is in the Power-33-8 package with 41W power dissipation.

FDMC6679AZ Features

• Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A

• Max rDS(on) = 18 mΩ at VGS = -4.5 V, ID = -8.5 A

• HBM ESD protection level of 8 kV typical(note 3)

• Extended VGSS range (-25 V) for battery applications

• High-performance trench technology for extremely low rDS(on)

• High power and current handling capability

• Termination is Lead-free and RoHS Compliant

FDMC6679AZ Applications

• Load Switch in Notebook 

• Server

• Notebook Battery Pack Power Management