CSD18541F5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website
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CSD18541F5 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-SMD, No Lead
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
FemtoFET™
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
Base Part Number
CSD18541
Number of Elements
1
Power Dissipation-Max
500mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
65m Ω @ 1A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
777pF @ 30V
Current - Continuous Drain (Id) @ 25°C
2.2A Ta
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
2.2A
Drain-source On Resistance-Max
0.075Ohm
DS Breakdown Voltage-Min
60V
Feedback Cap-Max (Crss)
10.5 pF
Length
1.49mm
Width
730μm
Thickness
338μm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
CSD18541F5 Product Details
CSD18541F5 Description
CSD18541F5 is a kind of 54-mΩ, 60-V N-channel FemtoFET? MOSFET providing ultralow on-state resistance and ultralow Qg and Qgd. Based on innovative technology, it is developed and optimized to minimize the footprint in many space-constrained industrial load switch applications. It provides an alternative to standard small signal MOSFETs.