FDMC8032L datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website
SOT-23
FDMC8032L Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
11 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 hours ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Number of Pins
8
Weight
196mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
Series
PowerTrench®
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory
FET General Purpose Power
Max Power Dissipation
12W
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
S-PDSO-N4
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
5.5 ns
Power - Max
1.9W
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
20m Ω @ 7A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
720pF @ 20V
Current - Continuous Drain (Id) @ 25°C
7A
Gate Charge (Qg) (Max) @ Vgs
11nC @ 10V
Rise Time
1.2ns
Fall Time (Typ)
1.3 ns
Turn-Off Delay Time
13 ns
Continuous Drain Current (ID)
20A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
7A
Drain to Source Breakdown Voltage
40V
Pulsed Drain Current-Max (IDM)
50A
Avalanche Energy Rating (Eas)
13 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
750μm
Length
3mm
Width
3mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.769899
$0.769899
10
$0.726320
$7.2632
100
$0.685208
$68.5208
500
$0.646422
$323.211
1000
$0.609832
$609.832
FDMC8032L Product Details
FDMC8032L Description
The device includes two 40V N-channel MOSFET in a dual power supply 33 (3 Mm X 3 Mm MLP) package. The package is enhanced and has excellent heat dissipation performance.
FDMC8032L Features
Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A
Max rDS(on) = 27 mΩ at VGS = 4.5 V, ID = 6 A
Low Inductance Packaging Shortens Rise/Fall Times
Lower Switching Losses
100% Rg Tested
Termination is Lead-free and RoHS Compliant
FDMC8032L Applications
This product is general usage and suitable for many different applications.