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FDMC8032L

FDMC8032L

FDMC8032L

ON Semiconductor

FDMC8032L datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDMC8032L Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 196mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory FET General Purpose Power
Max Power Dissipation 12W
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N4
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 5.5 ns
Power - Max 1.9W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 720pF @ 20V
Current - Continuous Drain (Id) @ 25°C 7A
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 1.2ns
Fall Time (Typ) 1.3 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 50A
Avalanche Energy Rating (Eas) 13 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 750μm
Length 3mm
Width 3mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.769899 $0.769899
10 $0.726320 $7.2632
100 $0.685208 $68.5208
500 $0.646422 $323.211
1000 $0.609832 $609.832
FDMC8032L Product Details

FDMC8032L         Description


  The device includes two 40V N-channel MOSFET in a dual power supply 33 (3 Mm X 3 Mm MLP) package. The package is enhanced and has excellent heat dissipation performance.


FDMC8032L       Features

 

Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A

Max rDS(on) = 27 mΩ at VGS = 4.5 V, ID = 6 A

Low Inductance Packaging Shortens Rise/Fall Times

Lower Switching Losses

100% Rg Tested

Termination is Lead-free and RoHS Compliant


FDMC8032L           Applications


This product is general usage and suitable for many different applications.

 

 

 





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