FDMC8200

new-10%

FDMC8200

Manufacturer part number:FDMC8200

Manufacturer:ON Semiconductor

Description:FDMC8200 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMC8200 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Contact Plating	Gold
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Weight	186mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	20MOhm
Subcategory	FET General Purpose Power
Max Power Dissipation	900mW
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.2W
Case Connection	DRAIN-SOURCE
Power - Max	700mW 900mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	20m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	660pF @ 15V
Current - Continuous Drain (Id) @ 25°C	8A 12A
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Rise Time	4ns
Fall Time (Typ)	6 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	8A
Threshold Voltage	2.3V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	8A
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	40A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	2.3 V
Feedback Cap-Max (Crss)	30 pF
Turn On Time-Max (ton)	30ns
Height	750μm
Length	3mm
Width	3mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free