FDMC89521L

new-10%

Manufacturer part number:FDMC89521L

Manufacturer:ON Semiconductor

Description:FDMC89521L datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMC89521L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Weight	196mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	17MOhm
Terminal Finish	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Additional Feature	AVALANCHE ENERGY RATED
Max Power Dissipation	800mW
JESD-30 Code	S-PDSO-N4
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.9W
Case Connection	DRAIN
Turn On Delay Time	7.9 ns
Power - Max	1.9W Ta 16W Tc
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	17m Ω @ 8.2A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1635pF @ 30V
Current - Continuous Drain (Id) @ 25°C	8.2A Ta
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Rise Time	2.1ns
Fall Time (Typ)	1.7 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	8.2A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Feedback Cap-Max (Crss)	15 pF
Height	800μm
Length	3mm
Width	3mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free