SI4210DY-T1-GE3

new-10%

Manufacturer part number:SI4210DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 6.5A 2.7W 35.5mohm @ 10V

Case Package:SOT-23

Datasheet:SI4210DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Weight	506.605978mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.7W
Base Part Number	SI4210
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Power Dissipation	1.78W
Turn On Delay Time	12 ns
Power - Max	2.7W
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	35.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	445pF @ 15V
Current - Continuous Drain (Id) @ 25°C	6.5A
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	55ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	1 ns
Continuous Drain Current (ID)	6.5A
Threshold Voltage	2.5V
Gate to Source Voltage (Vgs)	20V
Input Capacitance	445pF
FET Feature	Logic Level Gate
Drain to Source Resistance	35.5mOhm
Rds On Max	35.5 mΩ
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant