SQJB60EP-T1_GE3

new-10%

Manufacturer part number:SQJB60EP-T1_GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2 N-CH 60V POWERPAK SO8

Case Package:SOT-23

Datasheet:SQJB60EP-T1_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	Automotive, AEC-Q101, TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Max Power Dissipation	48W
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G4
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	12m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Drain to Source Voltage (Vdss)	60V
Continuous Drain Current (ID)	30A
Threshold Voltage	2V
Drain-source On Resistance-Max	0.012Ohm
Pulsed Drain Current-Max (IDM)	84A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant