SSM6L09FUTE85LF

new-10%

Manufacturer part number:SSM6L09FUTE85LF

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-Ch P-Ch Sg FET 0.4A -0.2A 30V -30V

Case Package:SOT-23

Datasheet:SSM6L09FUTE85LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	Other Transistors
Max Power Dissipation	300mW
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	85 ns
FET Type	N and P-Channel
Rds On (Max) @ Id, Vgs	700m Ω @ 200MA, 10V
Vgs(th) (Max) @ Id	1.8V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	20pF @ 5V
Current - Continuous Drain (Id) @ 25°C	400mA 200mA
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time	85 ns
Continuous Drain Current (ID)	200mA
Gate to Source Voltage (Vgs)	-1.8V
Drain Current-Max (Abs) (ID)	0.4A
Drain to Source Breakdown Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
RoHS Status	RoHS Compliant