QS8K13TCR

new-10%

Manufacturer part number:QS8K13TCR

Manufacturer:ROHM Semiconductor

Description:MOSFET 2N-CH 30V 6A TSMT8

Case Package:SOT-23

Datasheet:QS8K13TCR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2012
JESD-609 Code	e2
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin/Copper (Sn/Cu)
Subcategory	FET General Purpose Power
Max Power Dissipation	550mW
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	10
Pin Count	8
JESD-30 Code	R-PDSO-F8
Qualification Status	Not Qualified
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	550mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	28m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	390pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Drain to Source Voltage (Vdss)	30V
Continuous Drain Current (ID)	6A
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	0.039Ohm
Pulsed Drain Current-Max (IDM)	18A
DS Breakdown Voltage-Min	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	ROHS3 Compliant