FDMS8670 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDMS8670 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
68.1mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
2.5W Ta 78W Tc
Element Configuration
Single
Power Dissipation
78W
Turn On Delay Time
14 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
2.6m Ω @ 24A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3940pF @ 15V
Current - Continuous Drain (Id) @ 25°C
24A Ta 42A Tc
Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V
Rise Time
5ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
4 ns
Turn-Off Delay Time
33 ns
Continuous Drain Current (ID)
42A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.254869
$0.254869
10
$0.240443
$2.40443
100
$0.226833
$22.6833
500
$0.213993
$106.9965
1000
$0.201881
$201.881
FDMS8670 Product Details
FDMS8670 Description
The N-channel MOSFET is manufactured using Fairchild's latest proprietary power groove process, which is tailor-made to minimize on-resistance. The device demonstrates the industry-leading switch FOM (RDS*Qgd) to improve the efficiency of DC-DC synchronous rectification.