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FDMS8670

FDMS8670

FDMS8670

ON Semiconductor

FDMS8670 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDMS8670 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.5W Ta 78W Tc
Element Configuration Single
Power Dissipation 78W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.6m Ω @ 24A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3940pF @ 15V
Current - Continuous Drain (Id) @ 25°C 24A Ta 42A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 42A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.254869 $0.254869
10 $0.240443 $2.40443
100 $0.226833 $22.6833
500 $0.213993 $106.9965
1000 $0.201881 $201.881
FDMS8670 Product Details

FDMS8670   Description


The N-channel MOSFET is manufactured using Fairchild's latest proprietary power groove process, which is tailor-made to minimize on-resistance. The device demonstrates the industry-leading switch FOM (RDS*Qgd) to improve the efficiency of DC-DC synchronous rectification.


FDMS8670     Features


Max rps(on)=2.6mΩat VGs=10Vlo=24A

Max rps(on)=3.8mΩat VGs=4.5V1p=18A

100% UIL Tested

 RoHS Compliant

 

FDMS8670    Application


DC-DC Conversion


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