SIHA4N80E-GE3 Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 622pF @ 100V.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 1.1Ohm, which means the device is not biased.This transistor requires a drain-source voltage (Vdss) of 800V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

SIHA4N80E-GE3 Features

single MOSFETs transistor is 1.1Ohm
a 800V drain to source voltage (Vdss)

SIHA4N80E-GE3 Applications

There are a lot of Vishay Siliconix
SIHA4N80E-GE3 applications of single MOSFETs transistors.

• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching