FDPF3N50NZ

new-10%

Manufacturer part number:FDPF3N50NZ

Manufacturer:ON Semiconductor

Description:N-Channel Tube 2.5 Ω @ 1.5A, 10V ±25V 280pF @ 25V 9nC @ 10V TO-220-3 Full Pack

Case Package:SOT-23

Datasheet:FDPF3N50NZ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Factory Lead Time	4 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	2.27g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	UniFET-II™
Published	2010
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Number of Elements	1
Power Dissipation-Max	27W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	27W
Case Connection	ISOLATED
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.5 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	280pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3A Tc
Gate Charge (Qg) (Max) @ Vgs	9nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	17 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	3A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	25V
Drain Current-Max (Abs) (ID)	3A
Drain to Source Breakdown Voltage	500V
Height	15.87mm
Length	10.16mm
Width	4.7mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant