SI1424EDH-T1-GE3 Overview

This device conducts a continuous drain current (ID) of 4A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 4A.When the device is turned off, a turn-off delay time of 5.6 μs occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 150 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.Activation of any electrical operation happens at threshold voltage, and this transistor has 400mV threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 20V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V volts (4.5V).

SI1424EDH-T1-GE3 Features

a continuous drain current (ID) of 4A
the turn-off delay time is 5.6 μs
a threshold voltage of 400mV
a 20V drain to source voltage (Vdss)

SI1424EDH-T1-GE3 Applications

There are a lot of Vishay Siliconix
SI1424EDH-T1-GE3 applications of single MOSFETs transistors.

• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching