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SI5424DC-T1-GE3

SI5424DC-T1-GE3

SI5424DC-T1-GE3

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 24m Ω @ 4.8A, 10V ±25V 950pF @ 15V 32nC @ 10V 8-SMD, Flat Lead

SOT-23

SI5424DC-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Weight 84.99187mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET®
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 6.25W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 4.8A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±25V
Continuous Drain Current (ID) 6A
Threshold Voltage 2.3V
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.024Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 40A
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.558025 $2.558025
10 $2.413230 $24.1323
100 $2.276632 $227.6632
500 $2.147767 $1073.8835
1000 $2.026194 $2026.194
SI5424DC-T1-GE3 Product Details

SI5424DC-T1-GE3 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 950pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 6A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.A device can conduct a maximum continuous current of [6A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 40A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2.3V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

SI5424DC-T1-GE3 Features


a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 30V voltage
based on its rated peak drain current 40A.
a threshold voltage of 2.3V


SI5424DC-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI5424DC-T1-GE3 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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