FDS8928A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website
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FDS8928A Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
230.4mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
30MOhm
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
5.5A
Number of Elements
2
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Power - Max
900mW
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
30m Ω @ 5.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
900pF @ 10V
Current - Continuous Drain (Id) @ 25°C
5.5A 4A
Gate Charge (Qg) (Max) @ Vgs
28nC @ 4.5V
Rise Time
23ns
Drain to Source Voltage (Vdss)
30V 20V
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
90 ns
Turn-Off Delay Time
260 ns
Continuous Drain Current (ID)
5.5A
Threshold Voltage
670mV
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
-20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
670 mV
Height
1.5mm
Length
5mm
Width
4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.56594
$1.13188
5,000
$0.53920
$2.696
12,500
$0.52011
$6.24132
FDS8928A Product Details
FDS8928A Description
These dual N-channel and P-channel enhanced mode power field effect transistors are produced using proprietary high cell density DMOS technology. This high-density process is specially tailored to minimize on-resistance and provide excellent switching performance. These devices are particularly suitable for low-voltage applications, such as laptop power management and other battery-powered circuits, which require fast switching, low series power loss and anti-transient.
FDS8928A Features
N-Channel
5.5A, 30V
Max. RDS(on) = 30 mΩ at VGS = 4.5 V,
Max. RDS(on) = 38 mΩ at VGS = 2.5 V
P-Channel
-4A, -20V
Max. RDS(on) = 55 mΩ at VGS = -4.5 V
Max. RDS(on) = 72 mΩ at VGS = -2.5 V
High density cell design for extremely low RDS(ON)
High power and current handling capability in a widely used surface mount package
Dual (N & P-Channel) MOSFET in surface mount package
Applications
This product is general usage and suitable for many different applications.