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FDZ191P_P

FDZ191P_P

FDZ191P_P

ON Semiconductor

MOSFET P-CH 20V 3A 6WLCSP

SOT-23

FDZ191P_P Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 6-UFBGA, WLCSP
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.9W Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 85m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V

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