FGA25N120ANTDTU

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Manufacturer part number:FGA25N120ANTDTU

Manufacturer:ON Semiconductor

Description:FGA25N120ANTDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGA25N120ANTDTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	6.40101g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.2kV
Max Power Dissipation	312W
Current Rating	50A
Base Part Number	FGA25N120A
Element Configuration	Single
Power Dissipation	312mW
Input Type	Standard
Turn On Delay Time	50 ns
Rise Time	60ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	190 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	50A
Reverse Recovery Time	350 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.65V
Test Condition	600V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.65V @ 15V, 50A
Max Junction Temperature (Tj)	150°C
Continuous Collector Current	50A
IGBT Type	NPT and Trench
Gate Charge	200nC
Current - Collector Pulsed (Icm)	90A
Td (on/off) @ 25°C	50ns/190ns
Switching Energy	4.1mJ (on), 960μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	7.5V
Height	23.8mm
Length	15.8mm
Width	5mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free