FGA25S125P-SN00337 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
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FGA25S125P-SN00337 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Weight
6.401g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2016
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Power Dissipation
250W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Input Type
Standard
Power - Max
250W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.35V
Max Collector Current
50A
Collector Emitter Breakdown Voltage
1.25kV
Voltage - Collector Emitter Breakdown (Max)
1250V
Test Condition
600V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.35V @ 15V, 25A
IGBT Type
Trench Field Stop
Gate Charge
204nC
Current - Collector Pulsed (Icm)
75A
Td (on/off) @ 25°C
24ns/502ns
Switching Energy
1.09mJ (on), 580μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.044950
$4.04495
10
$3.815991
$38.15991
100
$3.599991
$359.9991
500
$3.396218
$1698.109
1000
$3.203979
$3203.979
FGA25S125P-SN00337 Product Details
FGA25S125P-SN00337 Description
Using advanced field stop trench and shorted-anode technology, ON Semiconductor's shorted-anode trench IGBTs offersuperior con-duction and switching performances forsoft switching applications. The device can operate inparallel configuration with exceptional avalanche capability .This device is designed for induction heating and microwaveoven.
FGA25S125P-SN00337 Features
? High Speed Switching
? Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A