FGD3245G2-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
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FGD3245G2-F085 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
260.37mg
Operating Temperature
-40°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2016
Series
Automotive, AEC-Q101, EcoSPARK®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin (Sn)
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
150W
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Rise Time-Max
7000ns
Element Configuration
Single
Input Type
Logic
Power - Max
150W
Clamping Voltage
450V
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.25V
Max Collector Current
23A
Collector Emitter Breakdown Voltage
450V
Collector Emitter Saturation Voltage
1.64V
Max Breakdown Voltage
450V
Vce(on) (Max) @ Vge, Ic
1.25V @ 4V, 6A
Gate Charge
23nC
Td (on/off) @ 25°C
900ns/5.4μs
Gate-Emitter Voltage-Max
12V
Gate-Emitter Thr Voltage-Max
2.2V
Fall Time-Max (tf)
15000ns
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.87602
$1.75204
5,000
$0.86520
$4.326
FGD3245G2-F085 Product Details
FGD3245G2-F085 Description
FGD3245G2-F085 provided by ON Semiconductor is a type of EcoSPARK N-channel ignition IGBT, which is designed based on EcoSPARK-2 technology. Based on this technology, external protection circuitry can be eliminated and excellent Vsat and SCIS Energy capability can be provided at elevated operating temperatures. The IGBT's collecter- to-emitter voltage can be clamped at 450V which enables systems that require a higher spark voltage based on an inte-grated zener-circuitry.