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NGTG50N60FLWG

  • NGTG50N60FLWG
  • NGTG50N60FLWG

NGTG50N60FLWG

NGTG50N60FLWG

ON Semiconductor

NGTG50N60FLWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

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NGTG50N60FLWG Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 5 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 223W
Pin Count 3
Element Configuration Single
Input Type Standard
Power - Max 223W
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 100A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.65V
Test Condition 400V, 50A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
IGBT Type Trench
Gate Charge 310nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 116ns/292ns
Switching Energy 1.1mJ (on), 600μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 21.08mm
Length 16.26mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.884099 $3.884099
10 $3.664244 $36.64244
100 $3.456834 $345.6834
500 $3.261165 $1630.5825
1000 $3.076570 $3076.57
NGTG50N60FLWG Product Details

NGTG50N60FLWG Description


With a low on state voltage and little switching loss, this Insulated Gate Bipolar Transistor (IGBT) excels in demanding switching applications. It has a durable and economical trench structure. NGTG50N60FLWG is an N-channel single IGBT from the manufacturer ON Semiconductor with the Collector Emitter Breakdown Voltage of 600V. The operating temperature of the NGTG50N60FLWG is -55°C~150°C TJ and its maximum power dissipation is 223W.



NGTG50N60FLWG Features


  • Low Saturation Voltage using Trench with Field Stop Technology

  • Low Switching Loss Reduces System Power Dissipation

  • Optimized for High Speed Switching

  • 5 s Short?Circuit Capability

  • These are Pb?Free Devices



NGTG50N60FLWG Applications


  • Power Factor Correction

  • Solar Inverters

  • Uninterruptable Power Supply (UPS)


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