FGH40N60SMDF

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Manufacturer part number:FGH40N60SMDF

Manufacturer:ON Semiconductor

Description:FGH40N60SMDF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGH40N60SMDF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	349W
Base Part Number	FGH40N60
Number of Elements	1
Rise Time-Max	28ns
Element Configuration	Single
Power Dissipation	349W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	12 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	92 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	80A
Reverse Recovery Time	90ns
JEDEC-95 Code	TO-247AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.9V
Turn On Time	37 ns
Test Condition	400V, 40A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 40A
Turn Off Time-Nom (toff)	132 ns
IGBT Type	Field Stop
Gate Charge	119nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	12ns/92ns
Switching Energy	1.3mJ (on), 260μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	17ns
Height	20.6mm
Length	15.6mm
Width	4.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free