FGH40T120SMD-F155

new-10%

Manufacturer part number:FGH40T120SMD-F155

Manufacturer:ON Semiconductor

Description:IGBT 1200V 80A 555W TO247-3

Case Package:SOT-23

Datasheet:FGH40T120SMD-F155 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	5 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	555W
Element Configuration	Single
Power Dissipation	555W
Input Type	Standard
Turn On Delay Time	40 ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	475 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	80A
Reverse Recovery Time	65 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	1.8V
Test Condition	600V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 40A
Max Junction Temperature (Tj)	175°C
Continuous Collector Current	80A
IGBT Type	Trench Field Stop
Gate Charge	370nC
Current - Collector Pulsed (Icm)	160A
Td (on/off) @ 25°C	40ns/475ns
Switching Energy	2.7mJ (on), 1.1mJ (off)
Gate-Emitter Voltage-Max	25V
Gate-Emitter Thr Voltage-Max	7.5V
Height	24.75mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free