STGWA20M65DF2 Description

The STGWA20M65DF2 is a Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT. This IGBT was created employing a cutting-edge, exclusive trench gate fieldstop structure. The device is a member of the M series of IGBTs, which represent the performance and efficiency of an inverter system in which low-loss and short-circuit functionality are crucial. Additionally, the narrow parameter distribution and positive VCE(sat) temperature coefficient lead to safer paralleling operations.

STGWA20M65DF2 Features

• Safer paralleling

• Low thermal resistance

• Soft and very fast recovery antiparallel diode

• High short-circuit withstand time

• VCE(sat) = 1.55 V (typ.) @ IC = 20 A

• Tight parameters distribution

STGWA20M65DF2 Applications

• Motor control

• UPS

• PFC

• General-purpose inverters