FGL40N120ANDTU

new-10%

Manufacturer part number:FGL40N120ANDTU

Manufacturer:ON Semiconductor

Description:FGL40N120ANDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGL40N120ANDTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Weight	6.756g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
HTS Code	8541.29.00.95
Voltage - Rated DC	1.2kV
Max Power Dissipation	500W
Current Rating	64A
Number of Elements	1
Element Configuration	Single
Power Dissipation	500W
Input Type	Standard
Turn On Delay Time	15 ns
Transistor Application	POWER CONTROL
Rise Time	20ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	110 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	64A
Reverse Recovery Time	112 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	3.15V
Turn On Time	45 ns
Test Condition	600V, 40A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 40A
Max Junction Temperature (Tj)	150°C
Continuous Collector Current	64A
Turn Off Time-Nom (toff)	165 ns
IGBT Type	NPT
Gate Charge	220nC
Current - Collector Pulsed (Icm)	160A
Td (on/off) @ 25°C	15ns/110ns
Switching Energy	2.3mJ (on), 1.1mJ (off)
Height	29mm
Length	20mm
Width	5mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free