IXYH40N90C3D1

new-10%

Manufacturer part number:IXYH40N90C3D1

Manufacturer:IXYS

Description:IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT

Case Package:SOT-23

Datasheet:IXYH40N90C3D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Series	GenX3™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	500W
Number of Elements	1
Element Configuration	Single
Power Dissipation	500W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	900V
Max Collector Current	90A
Reverse Recovery Time	100ns
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	900V
Collector Emitter Saturation Voltage	2.2V
Turn On Time	81 ns
Test Condition	450V, 40A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 40A
Turn Off Time-Nom (toff)	237 ns
Gate Charge	74nC
Current - Collector Pulsed (Icm)	180A
Td (on/off) @ 25°C	27ns/78ns
Switching Energy	1.9mJ (on), 1mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free