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STGF19NC60KD

STGF19NC60KD

STGF19NC60KD

STMicroelectronics

STGF19NC60KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGF19NC60KD Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 32W
Base Part Number STGF19
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 32W
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 16A
Reverse Recovery Time 31 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V
Turn On Time 38 ns
Test Condition 480V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 12A
Turn Off Time-Nom (toff) 270 ns
Gate Charge 55nC
Current - Collector Pulsed (Icm) 75A
Td (on/off) @ 25°C 30ns/105ns
Switching Energy 165μJ (on), 255μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.43000 $2.43
50 $2.08320 $104.16
100 $1.79560 $179.56
500 $1.50036 $750.18
1,000 $1.26725 $1.26725
2,500 $1.18955 $2.3791
5,000 $1.17660 $5.883
STGF19NC60KD Product Details

STGF19NC60KD Description


STGF19NC60KD ia a 20A,600V short-circuit rugged IGBT. The  STMicroelectronics STGF19NC60KD is a very fast IGBT developed using advanced PowerMESH? technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. What's more, the STGF19NC60KD operates within ambient temperatures from -55 to 150°C and with a power dissipation of 32mW.



STGF19NC60KD Features


  • Low on voltage drop (VCE(sat))

  • Short-circuit withstand time 10μs

  • IGBT co-packaged with ultrafast free-wheeling diode

  • In TO-220FP package

  • Low CRES / CIES ratio (no cross-conduction susceptibility)



STGF19NC60KD Applications


  • pumps 

  • motors

  • tool battery chargers

  • small appliances

  • A/V and computers

  • some high-torque tools


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