STGF19NC60KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
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STGF19NC60KD Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
PowerMESH™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
32W
Base Part Number
STGF19
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
32W
Case Connection
ISOLATED
Input Type
Standard
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
16A
Reverse Recovery Time
31 ns
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2V
Turn On Time
38 ns
Test Condition
480V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.75V @ 15V, 12A
Turn Off Time-Nom (toff)
270 ns
Gate Charge
55nC
Current - Collector Pulsed (Icm)
75A
Td (on/off) @ 25°C
30ns/105ns
Switching Energy
165μJ (on), 255μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.43000
$2.43
50
$2.08320
$104.16
100
$1.79560
$179.56
500
$1.50036
$750.18
1,000
$1.26725
$1.26725
2,500
$1.18955
$2.3791
5,000
$1.17660
$5.883
STGF19NC60KD Product Details
STGF19NC60KD Description
STGF19NC60KD ia a 20A,600V short-circuit rugged IGBT. The STMicroelectronics STGF19NC60KD is a very fast IGBT developed using advanced PowerMESH? technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. What's more, the STGF19NC60KD operates within ambient temperatures from -55 to 150°C and with a power dissipation of 32mW.
STGF19NC60KD Features
Low on voltage drop (VCE(sat))
Short-circuit withstand time 10μs
IGBT co-packaged with ultrafast free-wheeling diode
In TO-220FP package
Low CRES / CIES ratio (no cross-conduction susceptibility)