STGP30V60DF

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Manufacturer part number:STGP30V60DF

Manufacturer:STMicroelectronics

Description:STGP30V60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGP30V60DF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	258W
Base Part Number	STGP30
Number of Elements	1
Element Configuration	Single
Power Dissipation	258W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	60A
Reverse Recovery Time	53ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.35V
Turn On Time	59 ns
Test Condition	400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 30A
Turn Off Time-Nom (toff)	225 ns
IGBT Type	Trench Field Stop
Gate Charge	163nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	45ns/189ns
Switching Energy	383μJ (on), 233μJ (off)
Gate-Emitter Voltage-Max	20V
Height	15.75mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant