FJN965TA Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 230 @ 500mA 2V.A collector emitter saturation voltage of 1V allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 100mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (5A).Supplier device package TO-92-3 comes with the product.There is a 20V maximal voltage in the device due to collector-emitter breakdown.Maximum collector currents can be below 5A volts.

FJN965TA Features

the DC current gain for this device is 230 @ 500mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
the supplier device package of TO-92-3

FJN965TA Applications

There are a lot of ON Semiconductor FJN965TA applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface