PBSS4160U,115 Overview

In this device, the DC current gain is 200 @ 500mA 5V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 280mV @ 100mA, 1A.In this part, there is a transition frequency of 220MHz.There is a 60V maximal voltage in the device due to collector-emitter breakdown.

PBSS4160U,115 Features

the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 280mV @ 100mA, 1A
a transition frequency of 220MHz

PBSS4160U,115 Applications

There are a lot of Nexperia USA Inc. PBSS4160U,115 applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter