FJX992TF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 6V.The collector emitter saturation voltage is -300mV, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 1mA, 10mA.Keeping the emitter base voltage at -5V can result in a high level of efficiency.As a result, it can handle voltages as low as 120V volts.A maximum collector current of 100mA volts is possible.
FJX992TF Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
FJX992TF Applications
There are a lot of ON Semiconductor FJX992TF applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
