2SB1122T-TD-E Overview
This device has a DC current gain of 100 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at -5V to achieve high efficiency.The maximum collector current is 1A volts.
2SB1122T-TD-E Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
2SB1122T-TD-E Applications
There are a lot of ON Semiconductor 2SB1122T-TD-E applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
