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2SB1122T-TD-E

  • 2SB1122T-TD-E
  • 2SB1122T-TD-E

2SB1122T-TD-E

2SB1122T-TD-E

ON Semiconductor

2SB1122T-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SB1122T-TD-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-243AA
Surface Mount YES
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 500mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Element Configuration Single
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 50V
Max Frequency 150MHz
Collector Emitter Saturation Voltage -500mV
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -5V
Height 1.5mm
Length 4.5mm
Width 2.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.415312 $1.415312
10 $1.335200 $13.352
100 $1.259623 $125.9623
500 $1.188323 $594.1615
1000 $1.121060 $1121.06
2SB1122T-TD-E Product Details

2SB1122T-TD-E Overview


This device has a DC current gain of 100 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at -5V to achieve high efficiency.The maximum collector current is 1A volts.

2SB1122T-TD-E Features


the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V

2SB1122T-TD-E Applications


There are a lot of ON Semiconductor 2SB1122T-TD-E applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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