KSA1156OSTSTU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 100mA 5V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of -1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Collector current can be as low as 500mA volts at its maximum.
KSA1156OSTSTU Features
the DC current gain for this device is 60 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 10mA, 100mA
the emitter base voltage is kept at -7V
the current rating of this device is -500mA
KSA1156OSTSTU Applications
There are a lot of ON Semiconductor KSA1156OSTSTU applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
