MJD44H11T4-A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
MJD44H11T4-A Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Other Transistors
Max Power Dissipation
20W
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
MJD44
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE
Power Dissipation
20W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 4A 1V
Current - Collector Cutoff (Max)
10μA
JEDEC-95 Code
TO-252AA
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 8A
Collector Emitter Breakdown Voltage
80V
Max Breakdown Voltage
80V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.345984
$0.345984
10
$0.326400
$3.264
100
$0.307925
$30.7925
500
$0.290495
$145.2475
1000
$0.274052
$274.052
MJD44H11T4-A Product Details
MJD44H11T4-A Overview
In this device, the DC current gain is 40 @ 4A 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 400mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.There is a breakdown input voltage of 80V volts that it can take.In extreme cases, the collector current can be as low as 8A volts.
MJD44H11T4-A Features
the DC current gain for this device is 40 @ 4A 1V the vce saturation(Max) is 1V @ 400mA, 8A the emitter base voltage is kept at 5V
MJD44H11T4-A Applications
There are a lot of STMicroelectronics MJD44H11T4-A applications of single BJT transistors.