BC549BTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BC549BTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LOW NOISE
Subcategory
Other Transistors
Voltage - Rated DC
30V
Max Power Dissipation
500mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
100mA
Frequency
300MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BC549
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
250mV
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
hFE Min
110
Height
4.58mm
Length
4.58mm
Width
3.86mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.030029
$0.030029
500
$0.022080
$11.04
1000
$0.018400
$18.4
2000
$0.016881
$33.762
5000
$0.015776
$78.88
10000
$0.014676
$146.76
15000
$0.014193
$212.895
50000
$0.013956
$697.8
BC549BTA Product Details
BC549BTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.There is a transition frequency of 300MHz in the part.Breakdown input voltage is 30V volts.During maximum operation, collector current can be as low as 100mA volts.
BC549BTA Features
the DC current gain for this device is 200 @ 2mA 5V a collector emitter saturation voltage of 250mV the vce saturation(Max) is 600mV @ 5mA, 100mA the emitter base voltage is kept at 5V the current rating of this device is 100mA a transition frequency of 300MHz
BC549BTA Applications
There are a lot of ON Semiconductor BC549BTA applications of single BJT transistors.