KSC2690AYSTU Overview

In this device, the DC current gain is 160 @ 300mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 400mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 200mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1.2A).In the part, the transition frequency is 155MHz.A maximum collector current of 1.2A volts can be achieved.

KSC2690AYSTU Features

the DC current gain for this device is 160 @ 300mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.2A
a transition frequency of 155MHz

KSC2690AYSTU Applications

There are a lot of ON Semiconductor KSC2690AYSTU applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting