2N5192G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 1.5A 2V.A collector emitter saturation voltage of 1.4V allows maximum design flexibility.A VCE saturation (Max) of 1.4V @ 1A, 4A means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.As you can see, the part has a transition frequency of 2MHz.When collector current reaches its maximum, it can reach 4A volts.

2N5192G Features

the DC current gain for this device is 20 @ 1.5A 2V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 2MHz

2N5192G Applications

There are a lot of ON Semiconductor 2N5192G applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface