2SC4027S-TL-E Overview
In this device, the DC current gain is 100 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 130mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.There is a breakdown input voltage of 160V volts that it can take.When collector current reaches its maximum, it can reach 1.5A volts.
2SC4027S-TL-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 450mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
2SC4027S-TL-E Applications
There are a lot of ON Semiconductor 2SC4027S-TL-E applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
