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FMB100

FMB100

FMB100

ON Semiconductor

FMB100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FMB100 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 36mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 45V
Max Power Dissipation 700mW
Terminal Form GULL WING
Current Rating 500mA
Frequency 300MHz
Base Part Number FMB100
Number of Elements 2
Element Configuration Dual
Power Dissipation 700mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 5V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 400mV @ 20mA, 200mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 400mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.11000 $0.11
500 $0.1089 $54.45
1000 $0.1078 $107.8
1500 $0.1067 $160.05
2000 $0.1056 $211.2
2500 $0.1045 $261.25
FMB100 Product Details

FMB100 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 5V DC current gain.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 20mA, 200mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.In the part, the transition frequency is 300MHz.An input voltage of 45V volts is the breakdown voltage.A maximum collector current of 500mA volts is possible.

FMB100 Features


the DC current gain for this device is 100 @ 150mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 20mA, 200mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 300MHz

FMB100 Applications


There are a lot of ON Semiconductor FMB100 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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