FQI5N30TU

new-10%

Manufacturer part number:FQI5N30TU

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 300V 5.4A 3-Pin(3+Tab) I2PAK Rail

Case Package:SOT-23

Datasheet:FQI5N30TU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Supplier Device Package	I2PAK (TO-262)
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	300V
Technology	MOSFET (Metal Oxide)
Current Rating	5.4A
Power Dissipation-Max	3.13W Ta 70W Tc
Element Configuration	Single
Power Dissipation	3.13W
Turn On Delay Time	11 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	900mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	430pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.4A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	55ns
Drain to Source Voltage (Vdss)	300V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	27 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	5.4A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	300V
Input Capacitance	430pF
Drain to Source Resistance	680mOhm
Rds On Max	900 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free